Invention Grant
- Patent Title: T switch with high off state isolation
- Patent Title (中): T开关具有高关断状态隔离
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Application No.: US12537505Application Date: 2009-08-07
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Publication No.: US08212604B2Publication Date: 2012-07-03
- Inventor: Guo Dianbo
- Applicant: Guo Dianbo
- Applicant Address: SG Singapore
- Assignee: STMicroelectronics Asia Pacific Pte. Ltd.
- Current Assignee: STMicroelectronics Asia Pacific Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Wolf, Greenfield & Sacks, P.C.
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03K17/16

Abstract:
An analog T switch is disclosed which has high isolation in the off state. The analog T switch can include series-connected NMOS transistors having separate gate control. The gates of the NMOS transistors can be isolated from one another to improve off state isolation of the analog T switch. The analog switch can include series-connected PMOS transistors having separate gate control. The gates of the PMOS transistors can be isolated from one another to improve off state isolation of the analog T switch. The analog T switch can include a substrate voltage control circuit that controls the voltage of the substrate regions in which the PMOS transistors are formed. The substrate voltage control circuit can isolate the substrate regions of the PMOS transistors from one another in the off state to improve off state isolation of the analog T switch.
Public/Granted literature
- US20110032021A1 T SWITCH WITH HIGH OFF STATE ISOLATION Public/Granted day:2011-02-10
Information query
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