Invention Grant
US08212623B2 Terahertz oscillators and methods of manufacturing electron emitters
有权
太赫兹振荡器和制造电子发射器的方法
- Patent Title: Terahertz oscillators and methods of manufacturing electron emitters
- Patent Title (中): 太赫兹振荡器和制造电子发射器的方法
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Application No.: US12801711Application Date: 2010-06-22
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Publication No.: US08212623B2Publication Date: 2012-07-03
- Inventor: Chan-wook Baik , Joo-ho Lee
- Applicant: Chan-wook Baik , Joo-ho Lee
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, PLC
- Priority: KR10-2010-0012029 20100209
- Main IPC: H03B17/00
- IPC: H03B17/00

Abstract:
A terahertz oscillator may include a first insulating layer, an electron emitter on the first insulating layer, adapted to emit an electron beam, and including a cathode, an anode, an oscillating circuit, and a collector sequentially disposed, spaced apart from each other, on the first insulating layer in a direction in which the electron beam is emitted from the electron emitter, wherein the oscillating circuit converts energy of the electron beam to energy of an electromagnetic wave, and wherein the collector collects the electron beam, an output unit adapted to emit the electromagnetic wave from the oscillating circuit to outside of the terahertz oscillator, and an electron emitting material layer. The cathode may include a first curved portion that extends in a direction perpendicular to the first insulating layer. The electron emitting material layer may be on an inner surface of the first curved portion of the cathode.
Public/Granted literature
- US20110193638A1 Terahertz oscillators and methods of manufacturing electron emitters Public/Granted day:2011-08-11
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