Invention Grant
- Patent Title: Method for production of chip-integrated antennae with an improved emission efficiency
- Patent Title (中): 具有改善发射效率的芯片集成天线的生产方法
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Application No.: US11281744Application Date: 2005-11-17
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Publication No.: US08212725B2Publication Date: 2012-07-03
- Inventor: Michel Pons , Frédéric Lemaire
- Applicant: Michel Pons , Frédéric Lemaire
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics SA
- Current Assignee: STMicroelectronics SA
- Current Assignee Address: FR Montrouge
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: FR0452663 20041117
- Main IPC: H01Q1/38
- IPC: H01Q1/38 ; H01Q9/28
Abstract:
The method is to fabricate a microelectronic device with an integrated antenna. This method may include forming at least a first semiconducting layer on a substrate, forming in at least one zone of the first semiconducting layer of a structure to limit the circulation of current in the zone of the first semiconducting layer, forming a plurality of layers on the semiconducting layer and at least one antenna in the plurality of layers, with the antenna being formed opposite the zone. The antenna may be operable at radio frequencies above 10 GHz, and may have an improved emission efficiency.
Public/Granted literature
- US20060158378A1 Method for production of chip-integrated antennae with an improved emission efficiency Public/Granted day:2006-07-20
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