Invention Grant
- Patent Title: Magnetic sensor having a physically hard insulation layer over a magnetic bias structure
- Patent Title (中): 磁传感器在磁偏置结构上具有物理硬绝缘层
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Application No.: US11938677Application Date: 2007-11-12
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Publication No.: US08213132B2Publication Date: 2012-07-03
- Inventor: David Eugene Heim , Kim Y. Lee , Tsann Lin , Jih-Shiuan Luo
- Applicant: David Eugene Heim , Kim Y. Lee , Tsann Lin , Jih-Shiuan Luo
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Main IPC: G11B5/39
- IPC: G11B5/39

Abstract:
A narrow track-width magnetoresistive sensor by defining a trench formed between first and second hard bias layers and depositing the sensor into the trench. The sensor can include a sensor stack sandwiched between first and second electrically conductive lead layers. First and second electrically insulating side walls are formed at either side of the sensor stack. First and second hard bias layers extend from the sides of the sensor stack, being separated from the sensor stack by the first and second electrically insulating side walls. First and second physically hard insulation layers are provided over each of the hard bias layers.
Public/Granted literature
- US20080062576A1 TOPOGRAPHICALLY DEFINED THIN FILM CPP READ HEAD Public/Granted day:2008-03-13
Information query
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