Invention Grant
- Patent Title: Power factor correction circuit and driving method thereof
- Patent Title (中): 功率因数校正电路及其驱动方法
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Application No.: US12610519Application Date: 2009-11-02
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Publication No.: US08213135B2Publication Date: 2012-07-03
- Inventor: Dong-Hee Kim , Jung-Won Kim , Dae-Jung Kim
- Applicant: Dong-Hee Kim , Jung-Won Kim , Dae-Jung Kim
- Applicant Address: KR Haengdang-Dong, Seongdong-Gu, Seoul
- Assignee: Silicon Mitus, Inc.
- Current Assignee: Silicon Mitus, Inc.
- Current Assignee Address: KR Haengdang-Dong, Seongdong-Gu, Seoul
- Agency: Lexyoume IP Meister, PLLC.
- Priority: KR10-2008-0108522 20081103
- Main IPC: H02H7/00
- IPC: H02H7/00
Abstract:
The present invention relates to a set protection circuit for when a diode short-circuit defect occurs in a power factor correction circuit of a critical conduction mode. In a conventional power factor correction circuit, an excessive amount of current flows to a switch if a diode is short-circuited so that the switch is damaged. In order to prevent damage to the switch, the present invention provides a method for stopping turn-on of the switch when a switch current is excessive.
Public/Granted literature
- US20100110593A1 POWER FACTOR CORRECTION CIRCUIT AND DRIVING METHOD THEREOF Public/Granted day:2010-05-06
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