Invention Grant
- Patent Title: Semiconductor power conversion apparatus
- Patent Title (中): 半导体电力转换装置
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Application No.: US12870309Application Date: 2010-08-27
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Publication No.: US08213146B2Publication Date: 2012-07-03
- Inventor: Shuji Katoh , Toshihiko Matsuda , Takashi Ikimi , Hiroshi Nagata
- Applicant: Shuji Katoh , Toshihiko Matsuda , Takashi Ikimi , Hiroshi Nagata
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2006-261653 20060927
- Main IPC: H02H3/20
- IPC: H02H3/20
Abstract:
A semiconductor power conversion apparatus capable of protecting an IGBT from an overvoltage by supplying a sufficient gate current to the gate of the IGBT. The IGBT is protected from the overvoltage by connecting clamping elements connected in series between a collector of the IGBT and the gate thereof, and by connecting a resistor to each of different junction points between the clamping elements connected in series.
Public/Granted literature
- US20100321847A1 SEMICONDUCTOR POWER CONVERSION APPARATUS Public/Granted day:2010-12-23
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