Invention Grant
- Patent Title: Co-doped nickel oxide
- Patent Title (中): 共掺杂氧化镍
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Application No.: US12523988Application Date: 2008-01-22
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Publication No.: US08213154B2Publication Date: 2012-07-03
- Inventor: Michael B. Sullivan , Jian Wei Zheng , Ping Wu
- Applicant: Michael B. Sullivan , Jian Wei Zheng , Ping Wu
- Applicant Address: SG Singapore
- Assignee: Agency for Science, Technology and Research
- Current Assignee: Agency for Science, Technology and Research
- Current Assignee Address: SG Singapore
- Agency: Osha·Liang LLP
- International Application: PCT/SG2008/000026 WO 20080122
- International Announcement: WO2008/091226 WO 20080731
- Main IPC: H01G4/06
- IPC: H01G4/06

Abstract:
A nickel oxide that is co-doped with a first alkali metal dopant and a second metal dopant may be used, for example, to form a dielectric material in an electronic device. The dielectric material may be used, for example, in a capacitor. The second metal dopant of the nickel oxide may be, for example, tin, antimony, indium, tungsten, iridium, scandium, gallium, vanadium, chromium, gold, yttrium, lanthanum, ruthenium, rhodium, molybdenum or niobium.
Public/Granted literature
- US20100208411A1 Co-Doped Nickel Oxide Public/Granted day:2010-08-19
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