Invention Grant
- Patent Title: Multilayer chip capacitor
- Patent Title (中): 多层片式电容器
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Application No.: US12340200Application Date: 2008-12-19
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Publication No.: US08213155B2Publication Date: 2012-07-03
- Inventor: Byoung Hwa Lee , Sung Kwon Wi , Hae Suk Chung , Dong Seok Park , Sang Soo Park , Min Cheol Park
- Applicant: Byoung Hwa Lee , Sung Kwon Wi , Hae Suk Chung , Dong Seok Park , Sang Soo Park , Min Cheol Park
- Applicant Address: KR Gyunggi-do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2008-0077971 20080808
- Main IPC: H01G4/005
- IPC: H01G4/005 ; H01G4/228

Abstract:
There is provided a multilayer chip capacitor a multilayer chip capacitor including: a capacitor body including first and second capacitor units arranged therein; and first to fourth outer electrodes, wherein the first capacitor unit includes first and second inner electrodes, and the first capacitor unit includes a plurality of capacitor elements each having a pair of the first and second inner electrodes repeatedly laminated, the second capacitor unit includes third and fourth inner electrodes, and the second capacitor unit includes at least one capacitor element having a pair of the third and fourth inner electrodes repeatedly laminated, and at least one of the capacitor elements of the first capacitor unit is different from the other capacitor elements of the first capacitor unit in a lamination number of the first and second inner electrodes or a resonant frequency.
Public/Granted literature
- US20100033897A1 MULTILAYER CHIP CAPACITOR Public/Granted day:2010-02-11
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