Invention Grant
- Patent Title: Semiconductor memory device including plurality of memory chips
- Patent Title (中): 半导体存储器件包括多个存储器芯片
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Application No.: US13052439Application Date: 2011-03-21
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Publication No.: US08213208B2Publication Date: 2012-07-03
- Inventor: Ki-Tae Park
- Applicant: Ki-Tae Park
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2008-0008771 20080128
- Main IPC: G11C5/02
- IPC: G11C5/02

Abstract:
A semiconductor memory device includes a plurality of memory chips each including a chip identification (ID) generation circuit. The chip ID generation circuits of the respective memory chips are operatively connected together in a cascade configuration, and the chip ID generation circuits are activated in response to application of a power supply voltage the memory device to sequentially generate respective chip ID numbers of the plurality of device chips.
Public/Granted literature
- US20110164445A1 SEMICONDUCTOR MEMORY DEVICE INCLUDING PLURALITY OF MEMORY CHIPS Public/Granted day:2011-07-07
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