Invention Grant
- Patent Title: Method of manufacturing semiconductor device and semiconductor device
- Patent Title (中): 制造半导体器件和半导体器件的方法
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Application No.: US12826100Application Date: 2010-06-29
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Publication No.: US08213209B2Publication Date: 2012-07-03
- Inventor: Hiroshi Tsuda , Yoshitaka Kubota , Hiromichi Takaoka
- Applicant: Hiroshi Tsuda , Yoshitaka Kubota , Hiromichi Takaoka
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2009-172246 20090723
- Main IPC: G11C5/00
- IPC: G11C5/00 ; G11C17/18 ; G11C8/00 ; H01L23/52 ; H01L21/336

Abstract:
In a method of manufacturing a semiconductor device, element properties of an element property extraction pattern formed on a semiconductor wafer is extracted as element properties of a current control element corresponding to the element property extraction pattern. A supply energy to the current control element is set which is formed between nodes on the semiconductor wafer, based on the extracted element properties. The set supply energy is supplied to the current control element to irreversible control an electrical connection between the nodes through the device breakdown by the current control element.
Public/Granted literature
- US20110019494A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2011-01-27
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