Invention Grant
US08213213B2 Reference current generator for resistance type memory and method thereof
有权
电阻型存储器的参考电流发生器及其方法
- Patent Title: Reference current generator for resistance type memory and method thereof
- Patent Title (中): 电阻型存储器的参考电流发生器及其方法
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Application No.: US12614631Application Date: 2009-11-09
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Publication No.: US08213213B2Publication Date: 2012-07-03
- Inventor: Meng-Fan Chang , Ku-Feng Lin , Pi-Feng Chiu
- Applicant: Meng-Fan Chang , Ku-Feng Lin , Pi-Feng Chiu
- Applicant Address: TW Hsin-Chu
- Assignee: National Tsing Hua University
- Current Assignee: National Tsing Hua University
- Current Assignee Address: TW Hsin-Chu
- Agency: WPAT, P.C.
- Agent Anthony King
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A reference current generator for a resistance type memory and a method thereof is disclosed. The reference current generator comprises N parallel circuit sets. Each of the N parallel circuit sets is formed with at least one first reference element and second reference elements connected in parallel. The number of the first reference elements plus the number of the second reference elements is N. The resistance value of first reference elements (a first resistance value) is not equal to the resistance value of the second reference elements (a second resistance value). An equivalent resistance provided with a equivalent resistance value between the first and second resistance value is formed by connecting the N parallel circuit sets in series between an input terminal and output terminal. A reference current is outputted from the output terminal by applying an operation voltage to the input terminal.
Public/Granted literature
- US20110110140A1 REFERENCE CURRENT GENERATOR FOR RESISTANCE TYPE MEMORY AND METHOD THEREOF Public/Granted day:2011-05-12
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