The present disclosure provides a non-volatile memory device. A memory device includes a first magnetic element having a fixed magnetization. The memory device also includes a second magnetic element having a non-fixed magnetization. The memory device further includes a barrier layer between the first and second magnetic elements. A unidirectional current source is electrically coupled to the first and second magnetic elements. The current source is configured to provide a first current to the first and second memory elements. The first current has a first current density and is in a first direction. The current source is also configured to provide a second current to the first and second magnetic elements. The second current has a second current density, different than the first current density, and is in the first direction. The first and second currents cause the non-fixed magnetization of the second magnetic element to toggle between substantially parallel to the fixed magnetization of the first magnetic element and between substantially antiparallel to the fixed magnetization of the first magnetic element.