Invention Grant
- Patent Title: Magnetic tunnel junction with compensation element
- Patent Title (中): 带有补偿元件的磁隧道结
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Application No.: US13210436Application Date: 2011-08-16
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Publication No.: US08213222B2Publication Date: 2012-07-03
- Inventor: Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Wei Tian , Xiaobin Wang , Xiaohua Lou
- Applicant: Yuankai Zheng , Dimitar V. Dimitrov , Dexin Wang , Wei Tian , Xiaobin Wang , Xiaohua Lou
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Mueting, Raasch & Gebhardt PA
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A magnetic tunnel junction having a compsensation element is disclosed. The magnetic tunnel junction includes a reference element, and a compensation element having an opposite magnetization moment to a magnetization moment of the reference element. A free magnetic layer is between the reference element and the compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic layer from the reference element. The free magnetic layer includes Co100-X-YFeXBY wherein X is a value being greater than 30 and Y is a value being greater than 15.
Public/Granted literature
- US20110298068A1 MAGNETIC TUNNEL JUNCTION WITH COMPENSATION ELEMENT Public/Granted day:2011-12-08
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