Invention Grant
- Patent Title: Multi-level memory devices and methods of operating the same
- Patent Title (中): 多级存储器件及其操作方法
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Application No.: US12283175Application Date: 2008-09-10
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Publication No.: US08213223B2Publication Date: 2012-07-03
- Inventor: Gwan-Hyeob Koh , Dae-Won Ha
- Applicant: Gwan-Hyeob Koh , Dae-Won Ha
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2007-0092219 20070911
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
The present invention provides a multi-level memory device and method of operating the same. The device comprises a memory structure in which a distribution density of resistance levels around its minimum value is higher than that around its maximum value.
Public/Granted literature
- US20090067230A1 Multi-level memory devices and methods of operating the same Public/Granted day:2009-03-12
Information query
