Invention Grant
US08213231B2 NAND flash memory devices having wiring with integrally-formed contact pads and dummy lines and methods of manufacturing the same
有权
具有具有整体形成的接触焊盘和虚线的布线的NAND闪存器件及其制造方法
- Patent Title: NAND flash memory devices having wiring with integrally-formed contact pads and dummy lines and methods of manufacturing the same
- Patent Title (中): 具有具有整体形成的接触焊盘和虚线的布线的NAND闪存器件及其制造方法
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Application No.: US12987795Application Date: 2011-01-10
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Publication No.: US08213231B2Publication Date: 2012-07-03
- Inventor: Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
- Applicant: Jang-ho Park , Jae-kwan Park , Dong-hwa Kwak , So-wi Jin , Byung-jun Hwang , Nam-su Lim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2007-0132606 20071217
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A NAND flash memory device includes a plurality of continuous conductors disposed on a common level of a multilayer substrate, the plurality of continuous conductors including respective conductive lines extending in parallel along a first direction, respective contact pads disposed at ends of the respective conductive lines and respective conductive dummy lines extending in parallel from the contact pads along a second direction.
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