Invention Grant
- Patent Title: Charge pump and semiconductor device having the same
- Patent Title (中): 电荷泵和具有相同功能的半导体器件
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Application No.: US12786734Application Date: 2010-05-25
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Publication No.: US08213237B2Publication Date: 2012-07-03
- Inventor: Ji-Hoon Lim
- Applicant: Ji-Hoon Lim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2009-0056612 20090624
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
A charge pump and method of operation are provided. The charge pump includes a first boosting unit configured to receive a pre-charge voltage and electrically charge a first MOS capacitor during a pre-charge period, and to boost a voltage of a connection node to a first output voltage during a boosting operation period, and a second boosting unit configured to receive the pre-charge voltage and electrically charge a second MOS capacitor during the pre-charge period, and to receive the first output voltage and boost a voltage of an output node to a second output voltage during the boosting operation period. Here, the pre-charge voltage is applied to electrically charge a parasitic capacitor during a parasitic capacitor charging period between the pre-charge period and the boosting operation period.
Public/Granted literature
- US20100329067A1 CHARGE PUMP AND SEMICONDUCTOR DEVICE HAVING THE SAME Public/Granted day:2010-12-30
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