Invention Grant
- Patent Title: Non-volatile memory device
- Patent Title (中): 非易失性存储器件
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Application No.: US12064165Application Date: 2006-08-17
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Publication No.: US08213239B2Publication Date: 2012-07-03
- Inventor: Erez Halahmi , Gilad Diamant , Tamar Ravon , Nery Ben-Azar , Jeffrey Levy , Ron Naaman
- Applicant: Erez Halahmi , Gilad Diamant , Tamar Ravon , Nery Ben-Azar , Jeffrey Levy , Ron Naaman
- Applicant Address: CH Vaumarcus NE
- Assignee: Novatrans Group SA
- Current Assignee: Novatrans Group SA
- Current Assignee Address: CH Vaumarcus NE
- Agency: Browdy and Neimark, PLLC
- International Application: PCT/IL2006/000963 WO 20060817
- International Announcement: WO2007/020648 WO 20070222
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
An electronic memory device includes at least one basic unit, which is configured as a memory cell for storing at least one bit of information. The basic unit includes a vacuum cavity for free charge carriers propagation therethrough, a region of charge carriers emission or entry into the vacuum cavity, an anode electrode which are kept under controllable voltage conditions, and at least one floating gate electrode accommodated in a path of the free charge carriers propagating through the vacuum cavity between the emission or entry region and the anode. The floating gate electrode serves for storing therein a charge indicative of the at least one bit of information.
Public/Granted literature
- US20110128784A1 NON-VOLATILE MEMORY DEVICE Public/Granted day:2011-06-02
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