Invention Grant
- Patent Title: Memory readout scheme using separate sense amplifier voltage
- Patent Title (中): 存储器读出方案使用单独的读出放大器电压
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Application No.: US12706099Application Date: 2010-02-16
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Publication No.: US08213241B2Publication Date: 2012-07-03
- Inventor: Chen-Lin Yang
- Applicant: Chen-Lin Yang
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe, Hauptman, Ham & Berner, LLP
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A memory includes a memory cell coupled to a data line. A sense amplifier is coupled to the data line. A power supply node has a first voltage. The first voltage is provided to the sense amplifier. A charge pump circuit is coupled to the sense amplifier. The charge pump circuit is configured to provide a second voltage to the sense amplifier when a read operation is performed.
Public/Granted literature
- US20110199850A1 MEMORY READOUT SCHEME USING SEPARATE SENSE AMPLIFIER VOLTAGE Public/Granted day:2011-08-18
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