Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12641055Application Date: 2009-12-17
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Publication No.: US08213245B2Publication Date: 2012-07-03
- Inventor: Kwang-Hyun Kim
- Applicant: Kwang-Hyun Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor, Inc.
- Current Assignee: Hynix Semiconductor, Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR2006-0134301 20061227
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/10 ; G11C8/00 ; G11C8/18

Abstract:
A semiconductor memory device includes data transmission devices for transmit data in synchronization with each other. The semiconductor memory device includes a plurality of data transferring unit, a first control unit, a multiplexing unit, and a second control unit. The plurality of data transferring unit transfers data to a plurality of global lines. The first control unit controls the plurality of data transferring unit in response to a column select signal to select a column of a memory cell. The multiplexing unit multiplexes the data transferred to the plurality of global lines. The second control unit controls the multiplexing unit, wherein the second control unit synchronizes the column select signal with a column address signal having a column address information of the memory cell.
Public/Granted literature
- US20100091580A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2010-04-15
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