Invention Grant
- Patent Title: Semiconductor memory
- Patent Title (中): 半导体存储器
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Application No.: US12696580Application Date: 2010-01-29
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Publication No.: US08213253B2Publication Date: 2012-07-03
- Inventor: Isao Fukushi
- Applicant: Isao Fukushi
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Main IPC: G11C7/14
- IPC: G11C7/14

Abstract:
A regular capacitor is saturated by an electric charge of a regular memory cell holding a high logic level and is not saturated by an electric charge from the regular memory cell holding a low logic level. A reference capacitor is saturated by the electric charge from a reference memory cell holding the high logic level. A differential sense amplifier differentially amplifies a difference between a regular read voltage read from the regular capacitor and a voltage which is lower by a first voltage than a reference read voltage being a saturation voltage read from the reference capacitor, and generates logic of data held in the memory cell. Accordingly, a difference between the reference voltage and the read voltage corresponding to the low logic level can be made relatively large. As a result, it is possible to improve a read margin.
Public/Granted literature
- US20100128515A1 SEMICONDUCTOR MEMORY Public/Granted day:2010-05-27
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