Invention Grant
US08213256B2 Anti-fuse circuit and semiconductor integrated circuit including the same
有权
防熔丝电路和半导体集成电路都包括在内
- Patent Title: Anti-fuse circuit and semiconductor integrated circuit including the same
- Patent Title (中): 防熔丝电路和半导体集成电路都包括在内
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Application No.: US12877364Application Date: 2010-09-08
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Publication No.: US08213256B2Publication Date: 2012-07-03
- Inventor: Hong-Jung Kim , Jin-Hee Cho
- Applicant: Hong-Jung Kim , Jin-Hee Cho
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0064909 20100706
- Main IPC: G11C17/18
- IPC: G11C17/18
Abstract:
An anti-fuse circuit includes an anti-fuse coupled to a sensing node, a driving unit configured to rupture the anti-fuse in response to a rupture enable signal, an anti-fuse status detecting unit configured to output an anti-fuse status detecting signal in response to a voltage at the sensing node corresponding to a rupture status of the anti-fuse, and a sensing current supplying unit configured to supply sensing current to the sensing node in response to a rupture sensing signal.
Public/Granted literature
- US20120008448A1 ANTI-FUSE CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING THE SAME Public/Granted day:2012-01-12
Information query
