Invention Grant
- Patent Title: Method for inspecting critical dimension uniformity at high speed measurement
- Patent Title (中): 在高速测量时检查临界尺寸均匀度的方法
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Application No.: US12607238Application Date: 2009-10-28
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Publication No.: US08213722B2Publication Date: 2012-07-03
- Inventor: Hee-Bom Kim , Myoung-Soo Lee , Young-Su Sung
- Applicant: Hee-Bom Kim , Myoung-Soo Lee , Young-Su Sung
- Applicant Address: KR
- Assignee: SAmsung Electronics Co., Ltd.
- Current Assignee: SAmsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2008-0108789 20081104
- Main IPC: G06K9/68
- IPC: G06K9/68

Abstract:
A method for inspecting a uniformity of CD (CD) of a photo mask pattern increases a production yield. The method obtains a CD by precisely measuring a photo mask by using, an electron microscope. Then, a measurement image having, a plurality of patterns formed in the photo mask is obtained by photographing the photo mask at a high speed through an optical microscope. A gray level based on the CD is calculated by capturing just a pattern area in the measurement image, and an estimated value and a correlation coefficient is obtained, when an open density of the measurement image is relatively low. Accordingly, a uniformity of CD can be confirmed more clearly in a measurement of high speed for a measurement image having a relatively low open density.
Public/Granted literature
- US20100111427A1 Method for Inspecting Critical Dimension Uniformity at High Speed Measurement Public/Granted day:2010-05-06
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