Invention Grant
- Patent Title: Electronic-integration compatible photonic integrated circuit and method for fabricating electronic-integration compatible photonic integrated circuit
- Patent Title (中): 电子集成兼容光子集成电路和制造电子集成兼容光子集成电路的方法
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Application No.: US12626178Application Date: 2009-11-25
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Publication No.: US08213751B1Publication Date: 2012-07-03
- Inventor: Seng-Tiong Ho , Yingyan Huang
- Applicant: Seng-Tiong Ho , Yingyan Huang
- Applicant Address: US IL Evanston
- Assignee: Optonet Inc.
- Current Assignee: Optonet Inc.
- Current Assignee Address: US IL Evanston
- Agent William L. Botjer
- Main IPC: G02B6/00
- IPC: G02B6/00 ; H01L21/00

Abstract:
An electronic-integration compatible photonic integrated circuit (EIC-PIC) for achieving high-performance computing and signal processing is provided. The electronic-integration compatible photonic integrated circuit comprises a plurality of electronic circuit structures and a plurality of photonic circuit structures. The electronic and photonic circuit structures are integrated by a process referred to as monolithic integration. An electronic circuit structure includes one or more electronic devices and a photonic circuit structure includes one or more photonic devices. The integration steps of electronic and photonic devices are further inserted into standard CMOS process. The photonic circuit structures and the electronic circuit structures are integrated to form the electronic-integration compatible photonic integrated circuit device.
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