Invention Grant
US08213804B2 Semiconductor optical amplifier for an external cavity diode laser
有权
用于外腔二极管激光器的半导体光放大器
- Patent Title: Semiconductor optical amplifier for an external cavity diode laser
- Patent Title (中): 用于外腔二极管激光器的半导体光放大器
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Application No.: US11810433Application Date: 2007-06-05
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Publication No.: US08213804B2Publication Date: 2012-07-03
- Inventor: Sergei Sochava
- Applicant: Sergei Sochava
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: H04B10/00
- IPC: H04B10/00

Abstract:
In one embodiment, a gain medium for an external cavity diode laser (ECDL) includes a gain section to provide a gain operation on optical energy in the ECDL that is controlled by a first electrical signal, a semiconductor optical amplifier (SOA) section disposed adjacent to the gain section to amplify the gained optical energy responsive to a second electrical signal, and a trench disposed between the gain section and the SOA section to act as an integrated mirror. Other embodiments are described and claimed.
Public/Granted literature
- US20080304826A1 Semiconductor optical amplifier for an external cavity diode laser Public/Granted day:2008-12-11
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