Invention Grant
- Patent Title: Semiconductor memory device including test mode circuit
- Patent Title (中): 半导体存储器件包括测试模式电路
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Application No.: US12198394Application Date: 2008-08-26
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Publication No.: US08214171B2Publication Date: 2012-07-03
- Inventor: Jae Hoon Cha
- Applicant: Jae Hoon Cha
- Applicant Address: KR Kyoungki-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Kyoungki-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2007-0091757 20070910
- Main IPC: G01R27/28
- IPC: G01R27/28 ; G01R31/00 ; G01R31/14

Abstract:
A semiconductor memory device having a test mode circuit is presented which includes: a mode setting unit, in response to an external command and a first address signal for a mode set, providing a mode register set signal corresponding to predetermined mode setting; and a test mode circuit, in response to the mode register set signal and a second address signal for test enable control in an initial operation, performing test mode enable; the test mode circuit, in response to the mode register set signal and a third address signal for test item selection in the test mode enable state, outputting a test mode item signal; and the test mode circuit, in a subsequent operation, receiving the fed-back test mode item signal to maintain the test mode enable state.
Public/Granted literature
- US20090070061A1 SEMICONDUCTOR MEMORY DEVICE INCLUDING TEST MODE CIRCUIT Public/Granted day:2009-03-12
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