Invention Grant
US08216480B2 Nanopin manufacturing method and nanometer sized tip array by utilizing the method
失效
纳豆素制造方法和纳米级尖端阵列利用该方法
- Patent Title: Nanopin manufacturing method and nanometer sized tip array by utilizing the method
- Patent Title (中): 纳豆素制造方法和纳米级尖端阵列利用该方法
-
Application No.: US12251584Application Date: 2008-10-15
-
Publication No.: US08216480B2Publication Date: 2012-07-10
- Inventor: Liang-chiun Chao , Chung-chi Liau , Jun-wei Lee
- Applicant: Liang-chiun Chao , Chung-chi Liau , Jun-wei Lee
- Applicant Address: TW Taipei
- Assignee: National Taiwan University of Science and Technology
- Current Assignee: National Taiwan University of Science and Technology
- Current Assignee Address: TW Taipei
- Agency: Kirton McConkie
- Agent Evan R. Witt
- Priority: TW97112590A 20080408
- Main IPC: B44C1/22
- IPC: B44C1/22

Abstract:
Methods to manufacture metal nanopins and metal oxide nanopins are disclosed. Metal nanopins are fabricated on a metal foil by capillaritron plasma source dry etching. The aspect ratio and the density of metal nanopins are controlled by adjusting the temperature of the metal foil during ion beam dry etching. The end radius of metal nanopins less than 10 nm and the aspect ratio of metal nanopins between 25 and 30 can be achieved. Besides, metal oxide nanopins are fabricated by ion implantation and thermal oxidation. The metal foil is implanted with ions and then thermally oxidized to form the metal oxide nanopins. It shows that the metal oxide nanopins fabricated with oxygen implantation exhibit better field emission properties.
Public/Granted literature
- US20090252889A1 NANOPIN MANUFACTURING METHOD AND NANOMETER SIZED TIP ARRAY BY UTILIZING THE METHOD Public/Granted day:2009-10-08
Information query