The present invention relates to a doped hydrogen storage material according to the general formula: MgxByMzHn wherein: (i) the ratio of x/y is in the range of from 0.15 to 1.5; (ii) z is in the range of from 0.005 to 0.35; (iii) x+y+z equals 1; (iv) M=is one or more metals selected from the group of selected Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu and Zn; (v) n is no more than 4y; and wherein x/y does not equal 0.5 and at least part of the doped hydrogen storage material is amorphous. The present invention further relates to the use of doped hydrogen storage materials according to the invention for storing hydrogen and a method for reversibly desorbing and/or absorbing hydrogen.