Invention Grant
- Patent Title: Method of making showerhead for semiconductor processing apparatus
- Patent Title (中): 制造半导体加工装置用喷头的方法
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Application No.: US12567676Application Date: 2009-09-25
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Publication No.: US08216640B2Publication Date: 2012-07-10
- Inventor: Ben-Son Chao , Yu-Feng Chang , Yen-Si Chen
- Applicant: Ben-Son Chao , Yu-Feng Chang , Yen-Si Chen
- Applicant Address: TW Taipei
- Assignee: Hermes-Epitek Corporation
- Current Assignee: Hermes-Epitek Corporation
- Current Assignee Address: TW Taipei
- Agency: Stout, Uxa, Buyan & Mullins, LLP
- Main IPC: C23C16/00
- IPC: C23C16/00

Abstract:
A method of making a showerhead for a semiconductor processing apparatus is disclosed. In one embodiment, the method includes providing a substrate; forming first holes in the substrate; forming a protective film on the substrate, where the protective film covers sidewalls of the first holes; and forming second holes in the substrate, where a part of the protective film within the first holes is removed. In another embodiment, the method includes providing a substrate; forming islands on the substrate; forming a protective film on the substrate, where the protective film does not cover the tops of the islands; and forming holes in the islands.
Public/Granted literature
- US20110076401A1 Method of Making Showerhead for Semiconductor Processing Apparatus Public/Granted day:2011-03-31
Information query
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