Invention Grant
- Patent Title: Buffer bilayers for electronic devices
- Patent Title (中): 电子设备缓冲层双层
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Application No.: US12466879Application Date: 2009-05-15
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Publication No.: US08216685B2Publication Date: 2012-07-10
- Inventor: Che-Hsiung Hsu , Chi Zhang
- Applicant: Che-Hsiung Hsu , Chi Zhang
- Applicant Address: US DE Wilmington
- Assignee: E I du Pont de Nemours and Company
- Current Assignee: E I du Pont de Nemours and Company
- Current Assignee Address: US DE Wilmington
- Main IPC: B32B15/04
- IPC: B32B15/04
Abstract:
The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including (i) at least one electrically conductive polymer doped with at least one non-fluorinated polymeric acid and (ii) at least one highly-fluorinated acid polymer. The bilayer has a second layer including a metal which can be one or more transition metals, Group 13 metals, Group 14 metals, or lanthanide metals.
Public/Granted literature
- US20110042688A1 BUFFER BILAYERS FOR ELECTRONIC DEVICES Public/Granted day:2011-02-24
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