Invention Grant
US08216863B2 Method for producing a field-emitter array with controlled apex sharpness
有权
制造具有受控顶尖锐度的场发射器阵列的方法
- Patent Title: Method for producing a field-emitter array with controlled apex sharpness
- Patent Title (中): 制造具有受控顶尖锐度的场发射器阵列的方法
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Application No.: US13001449Application Date: 2009-05-29
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Publication No.: US08216863B2Publication Date: 2012-07-10
- Inventor: Eugenie Kirk , Soichiro Tsujino
- Applicant: Eugenie Kirk , Soichiro Tsujino
- Applicant Address: CH Villigen PSI
- Assignee: Paul Scherrer Insitut
- Current Assignee: Paul Scherrer Insitut
- Current Assignee Address: CH Villigen PSI
- Agent Laurence A. Greenberg; Werner H. Stemer; Ralph E. Locher
- Priority: EP08011691 20080627
- International Application: PCT/EP2009/056595 WO 20090529
- International Announcement: WO2009/156242 WO 20091230
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/331
Abstract:
A method of manufacturing field-emitter arrays by a molding technique includes uniformly controlling a shape of mold holes to obtain field emitter tips having diameters below 100 nm and blunted side edges. Repeated oxidation and etching of a mold substrate formed of single-crystal semiconductor mold wafers is carried out, wherein the mold holes for individual emitters are fabricated by utilizing the crystal orientation dependence of the etching rate.
Public/Granted literature
- US20110104832A1 METHOD FOR PRODUCING A FIELD-EMITTER ARRAY WITH CONTROLLED APEX SHARPNESS Public/Granted day:2011-05-05
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