Invention Grant
- Patent Title: Light-emitting device and method for manufacturing the same
- Patent Title (中): 发光装置及其制造方法
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Application No.: US12767902Application Date: 2010-04-27
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Publication No.: US08216875B2Publication Date: 2012-07-10
- Inventor: Hisao Ikeda , Junichiro Sakata
- Applicant: Hisao Ikeda , Junichiro Sakata
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2003-336295 20030926
- Main IPC: H01L51/40
- IPC: H01L51/40

Abstract:
A light-emitting element is disclosed that can drive at a low driving voltage and that has a longer lifetime than the conventional light-emitting element, and a method is disclosed for manufacturing the light-emitting element. The disclosed light-emitting element includes a plurality of layers between a pair of electrodes; and at least one layer among the plurality of layers contains one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. Such the light-emitting element can suppress the crystallization of a layer containing one compound selected from the group consisting of oxide semiconductor and a metal oxide, and a compound having high hole transportation properties. As a result, a lifetime of the light-emitting element can be extended.
Public/Granted literature
- US20100207518A1 LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2010-08-19
Information query
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