Invention Grant
- Patent Title: Field effect transistor with air gap dielectric
- Patent Title (中): 具有气隙电介质的场效应晶体管
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Application No.: US12547529Application Date: 2009-08-26
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Publication No.: US08216909B2Publication Date: 2012-07-10
- Inventor: Wagdi W. Abadeer , Kiran V. Chatty , Robert J. Gauthier, Jr. , Jed H. Rankin , William R. Tonti , Yun Shi
- Applicant: Wagdi W. Abadeer , Kiran V. Chatty , Robert J. Gauthier, Jr. , Jed H. Rankin , William R. Tonti , Yun Shi
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Richard Kotulak
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8234
Abstract:
A field effect transistor (FET) that includes a drain formed in a first plane, a source formed in the first plane, a channel formed in the first plane and between the drain and the source and a gate formed in the first plane. The gate is separated from at least a portion of the body by an air gap. The air gap is also in the first plane.
Public/Granted literature
- US20100230732A1 FIELD EFFECT TRANSISTOR WITH AIR GAP DIELECTRIC Public/Granted day:2010-09-16
Information query
IPC分类:
