Invention Grant
- Patent Title: Plasma doping method
- Patent Title (中): 等离子体掺杂法
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Application No.: US13051436Application Date: 2011-03-18
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Publication No.: US08216922B2Publication Date: 2012-07-10
- Inventor: Shigenori Hayashi , Masafumi Kubota , Yuichiro Sasaki
- Applicant: Shigenori Hayashi , Masafumi Kubota , Yuichiro Sasaki
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2010-063747 20100319
- Main IPC: H01L21/26
- IPC: H01L21/26 ; H01L21/42
Abstract:
Plasma doping is performed using a plasma made of a gas containing an impurity which will serve as a dopant. In this case, at least one of plasma generation high-frequency power and biasing high-frequency power is supplied in the form of pulses.
Public/Granted literature
- US20110230038A1 PLASMA DOPING METHOD Public/Granted day:2011-09-22
Information query
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