Invention Grant
- Patent Title: Method for manufacturing a semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US13019759Application Date: 2011-02-02
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Publication No.: US08216940B2Publication Date: 2012-07-10
- Inventor: Koichi Motoyama
- Applicant: Koichi Motoyama
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2004-060584 20040304
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A semiconductor device includes a semiconductor substrate, a copper-containing metal interconnect over the semiconductor substrate, and a copper-containing connection plug, and the metal interconnect includes metal elements other than copper, and a concentration of different metal elements in a connection portion between the metal interconnect and the connection plug is higher than a concentration of the different metal elements in a center portion of the metal interconnect, and higher than a concentration of different elements in upper face portion of the metal interconnect other than the connection portion.
Public/Granted literature
- US20110124190A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2011-05-26
Information query
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