Invention Grant
- Patent Title: Polychromatic light emitting diode device having wavelength conversion layer made of semiconductor and method for manufacturing the same
- Patent Title (中): 具有由半导体制成的波长转换层的多色发光二极管装置及其制造方法
-
Application No.: US12577350Application Date: 2009-10-12
-
Publication No.: US08217400B2Publication Date: 2012-07-10
- Inventor: Shih Cheng Huang , Po Min Tu , Ying Chao Yeh , Wen Yu Lin , Peng Yi Wu , Shih Hsiung Chan
- Applicant: Shih Cheng Huang , Po Min Tu , Ying Chao Yeh , Wen Yu Lin , Peng Yi Wu , Shih Hsiung Chan
- Applicant Address: TW Hsinchu Hsien
- Assignee: Advanced Optoelectronic Technology, Inc.
- Current Assignee: Advanced Optoelectronic Technology, Inc.
- Current Assignee Address: TW Hsinchu Hsien
- Agency: Altis Law Group, Inc.
- Priority: TW97139142A 20081013
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L29/26 ; H01L31/12 ; H01L33/00
Abstract:
A wavelength conversion layer is formed on a surface of a light emitting device for transforming a portion of light emitted from the light emitting device into light of a different wavelength. The transformed light is mixed with the untransformed light, and thus the light emitting device can emit light having preferred CIE coordinates.
Public/Granted literature
- US20100090232A1 POLYCHROMATIC LED AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2010-04-15
Information query
IPC分类:
