Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12505581Application Date: 2009-07-20
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Publication No.: US08217425B2Publication Date: 2012-07-10
- Inventor: Tomoyuki Miyoshi , Shinichiro Wada , Yohei Yanagida
- Applicant: Tomoyuki Miyoshi , Shinichiro Wada , Yohei Yanagida
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2008-249506 20080929
- Main IPC: H01L27/10
- IPC: H01L27/10

Abstract:
The cell size is reduced and device reliability is improved for a semiconductor device including plural transistors making up a multi-channel output circuit. In a multi-channel circuit configuration, a group of transistors having a common function of plural channels are surrounded by a common trench for insulated isolation from another group of transistors having another function. The collectors of mutually adjacent transistors on the high side are commonly connected to a VH power supply, whereas the emitters of mutually adjacent transistors on the low side are commonly connected to a GND power supply.
Public/Granted literature
- US20100078676A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-04-01
Information query
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