Invention Grant
US08217435B2 Floating body memory cell having gates favoring different conductivity type regions
有权
具有有利于不同导电类型区域的门的浮体存储单元
- Patent Title: Floating body memory cell having gates favoring different conductivity type regions
- Patent Title (中): 具有有利于不同导电类型区域的门的浮体存储单元
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Application No.: US11644715Application Date: 2006-12-22
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Publication No.: US08217435B2Publication Date: 2012-07-10
- Inventor: Peter L. D. Chang , Uygar E. Avci , David L. Kencke , Ibrahim Ban
- Applicant: Peter L. D. Chang , Uygar E. Avci , David L. Kencke , Ibrahim Ban
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/66 ; H01L27/088 ; H01L21/00 ; H01L21/84 ; H01L21/336 ; H01L21/8234 ; H01L21/8238
Abstract:
A method for fabricating floating body memory cells (FBCs), and the resultant FBCs where gates favoring different conductivity type regions are used is described. In one embodiment, a p type back gate with a thicker insulation is used with a thinner insulated n type front gate. Processing, which compensates for misalignment, which allows the different oxide and gate materials to be fabricated is described.
Public/Granted literature
- US20080149984A1 Floating body memory cell having gates favoring different conductivity type regions Public/Granted day:2008-06-26
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