Invention Grant
US08217439B2 DRAM unit cells, capacitors, methods of forming DRAM unit cells, and methods of forming capacitors
有权
DRAM单位电池，电容器，形成DRAM单位电池的方法，以及形成电容器的方法
- Patent Title: DRAM unit cells, capacitors, methods of forming DRAM unit cells, and methods of forming capacitors
- Patent Title (中): DRAM单位电池，电容器，形成DRAM单位电池的方法，以及形成电容器的方法
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Application No.: US13080489Application Date: 2011-04-05
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Publication No.: US08217439B2Publication Date: 2012-07-10
- Inventor: John Kennedy
- Applicant: John Kennedy
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/94 ; H01L21/8242
Abstract:
Some embodiments include methods of forming capacitors. A first capacitor storage node may be formed within a first opening in a first sacrificial material. A second sacrificial material may be formed over the first capacitor storage node and over the first sacrificial material, and a retaining structure may be formed over the second sacrificial material. A second opening may be formed through the retaining structure and the second sacrificial material, and a second capacitor storage node may be formed within the second opening and against the first storage node. The first and second sacrificial materials may be removed, and then capacitor dielectric material may be formed along the first and second storage nodes. Capacitor electrode material may then be formed along the capacitor dielectric material. Some embodiments include methods of forming DRAM unit cells, and some embodiments include DRAM unit cell constructions.
Public/Granted literature
- US20110180863A1 DRAM Unit Cells, Capacitors, Methods Of Forming DRAM Unit Cells, And Methods Of Forming Capacitors Public/Granted day:2011-07-28
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