Invention Grant
US08217443B2 Semiconductor device including a floating gate 有权
包括浮动栅极的半导体装置

  • Patent Title: Semiconductor device including a floating gate
  • Patent Title (中): 包括浮动栅极的半导体装置
  • Application No.: US12470439
    Application Date: 2009-05-21
  • Publication No.: US08217443B2
    Publication Date: 2012-07-10
  • Inventor: Naoki Izumi
  • Applicant: Naoki Izumi
  • Applicant Address: JP Kyoto
  • Assignee: Rohm Co., Ltd.
  • Current Assignee: Rohm Co., Ltd.
  • Current Assignee Address: JP Kyoto
  • Agency: Rabin & Berdo, P.C.
  • Priority: JP2008-135514 20080523
  • Main IPC: H01L29/788
  • IPC: H01L29/788
Semiconductor device including a floating gate
Abstract:
A semiconductor device includes a semiconductor layer having a trench; a source region formed in a surface layer portion thereof adjacently to a first side of the trench; a drain region formed in the surface layer portion adjacently to a second side of the trench; a first insulating film formed in the trench; a floating gate stacked on the first insulating film and opposed to the trench, and extending over and covering only partially the source and drain regions; a second insulating film formed on the floating gate; and a control gate at least partially embedded in the trench so that a portion embedded in the trench is opposed to the floating gate through the second insulating film. The first insulating film has a thin portion in contact with the drain region and a thick portion formed by the remainder thereof which covers the entire bottom surface of the trench.
Public/Granted literature
Information query
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L29/00 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件(H01L31/00至H01L47/00,H01L51/05优先;除半导体或其电极之外的零部件入H01L23/00;由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L29/66 .按半导体器件的类型区分的
H01L29/68 ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的(H01L29/96优先)
H01L29/76 ...单极器件
H01L29/772 ....场效应晶体管
H01L29/78 .....由绝缘栅产生场效应的
H01L29/788 ......带有浮栅的
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