Invention Grant
- Patent Title: Semiconductor device including a floating gate
- Patent Title (中): 包括浮动栅极的半导体装置
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Application No.: US12470439Application Date: 2009-05-21
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Publication No.: US08217443B2Publication Date: 2012-07-10
- Inventor: Naoki Izumi
- Applicant: Naoki Izumi
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2008-135514 20080523
- Main IPC: H01L29/788
- IPC: H01L29/788

Abstract:
A semiconductor device includes a semiconductor layer having a trench; a source region formed in a surface layer portion thereof adjacently to a first side of the trench; a drain region formed in the surface layer portion adjacently to a second side of the trench; a first insulating film formed in the trench; a floating gate stacked on the first insulating film and opposed to the trench, and extending over and covering only partially the source and drain regions; a second insulating film formed on the floating gate; and a control gate at least partially embedded in the trench so that a portion embedded in the trench is opposed to the floating gate through the second insulating film. The first insulating film has a thin portion in contact with the drain region and a thick portion formed by the remainder thereof which covers the entire bottom surface of the trench.
Public/Granted literature
- US20090289294A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-11-26
Information query
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