Invention Grant
- Patent Title: Semiconductor device and method of forming a semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12522033Application Date: 2007-01-04
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Publication No.: US08217448B2Publication Date: 2012-07-10
- Inventor: Evgueniy Stefanov , Alain Deram , Jean-Michel Reynes
- Applicant: Evgueniy Stefanov , Alain Deram , Jean-Michel Reynes
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- International Application: PCT/IB2007/000522 WO 20070104
- International Announcement: WO2008/081225 WO 20080710
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/78

Abstract:
A method of forming a semiconductor device comprises providing a semiconductor substrate, providing a semiconductor layer of a first conductivity type over the semiconductor substrate, forming a first region of the first conductivity type in the semiconductor layer, and forming a control region over the semiconductor layer and over part of the first region. A mask layer is formed over the semiconductor layer and outlines a first portion of a surface of the semiconductor layer over part of the first region. Semiconductor material of a second conductivity type is provided to the outlined first portion to provide a second region in the semiconductor layer. The first region and second region are driven into the semiconductor layer so as to form a pre-control region of the first conductivity type extending into the semiconductor layer from the surface and under a portion of the control region and a graded body region of the second conductivity type extending into the semiconductor layer under the pre-control region. A body region is formed by providing semiconductor material of the second conductivity type to the outlined first portion. The body region extends into the pre-control region. A current electrode region is formed in the body region.
Public/Granted literature
- US20100109078A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE Public/Granted day:2010-05-06
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