Invention Grant
- Patent Title: Semiconductor memory devices
- Patent Title (中): 半导体存储器件
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Application No.: US12984860Application Date: 2011-01-05
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Publication No.: US08217467B2Publication Date: 2012-07-10
- Inventor: Jong-Sun Sel , Jung-Dal Choi , Choong-Ho Lee , Ju-Hyuck Chung , Hee-Soo Kang , Dong-uk Choi
- Applicant: Jong-Sun Sel , Jung-Dal Choi , Choong-Ho Lee , Ju-Hyuck Chung , Hee-Soo Kang , Dong-uk Choi
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR2007-0117390 20071116
- Main IPC: H01L21/70
- IPC: H01L21/70

Abstract:
In some embodiments, a semiconductor memory device includes a substrate that includes a cell array region and a peripheral circuit region. The semiconductor memory device further includes a device isolation pattern on the substrate. The device isolation pattern defines a first active region and a second active region within the cell array region and a third active region in the peripheral circuit region. The semiconductor memory device further includes a first common source region, a plurality of first source/drain regions, and a first drain region in the first active region. The semiconductor memory device further includes a second common source region, a plurality of second source/drain regions, and a second drain region in the second active region. The semiconductor memory device further includes a third source/drain region in the third active region. The semiconductor memory device further includes a common source line contacting the first and second common source regions.
Public/Granted literature
- US20110095377A1 SEMICONDUCTOR MEMORY DEVICES Public/Granted day:2011-04-28
Information query
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