Invention Grant
- Patent Title: Field effect device including recessed and aligned germanium containing channel
- Patent Title (中): 场效应器件包括凹入和对准的含锗通道
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Application No.: US12702682Application Date: 2010-02-09
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Publication No.: US08217470B2Publication Date: 2012-07-10
- Inventor: Xiangdong Chen , Brian J. Greene , Haining S. Yang
- Applicant: Xiangdong Chen , Brian J. Greene , Haining S. Yang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Joseph P. Abate, Esq.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336
Abstract:
A field effect structure and a method for fabricating the field effect structure include a germanium containing channel interposed between a plurality of source and drain regions. The germanium containing channel is coplanar with the plurality of source and drain regions, and the germanium containing channel includes a germanium containing material having a germanium content greater than the germanium content of the plurality of source and drain regions.
Public/Granted literature
- US20100200934A1 FIELD EFFECT DEVICE INCLUDNG RECESSED AND ALIGNED GERMANIUM CONTAINING CHANNEL Public/Granted day:2010-08-12
Information query
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