Invention Grant
US08217475B2 Backside controlled MEMS capacitive sensor and interface and method
有权
背面控制MEMS电容传感器及其接口和方法
- Patent Title: Backside controlled MEMS capacitive sensor and interface and method
- Patent Title (中): 背面控制MEMS电容传感器及其接口和方法
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Application No.: US12121070Application Date: 2008-05-15
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Publication No.: US08217475B2Publication Date: 2012-07-10
- Inventor: Peter Seesink , Omar Abed
- Applicant: Peter Seesink , Omar Abed
- Applicant Address: US CA Moorpark
- Assignee: Custom Sensors & Technologies, Inc.
- Current Assignee: Custom Sensors & Technologies, Inc.
- Current Assignee Address: US CA Moorpark
- Agency: Gilman Clark & Hunter LLC
- Main IPC: H01L29/94
- IPC: H01L29/94

Abstract:
Described herein is the sense element assembly for a capacitive pressure sensor and method for creating same that has increased sensitivity despite the parasitic capacitance that is created. The capacitive sensor element assembly, comprises a first semiconductive layer, and a first conductive layer, a first dielectric layer into which a cavity has been formed, the dielectric layer lying between the first semiconductive layer and the first conductive layer, wherein an electrical connection is made to the second conductive layer. A preferred method for fabricating a capacitive sensor assembly of the present invention comprises the steps of forming a dielectric layer on top of a conductive handle wafer; creating at least one cavity in the dielectric layer, bonding a thin semiconductive layer to the dielectric layer and connecting an operational amplifier to the input of the capacitive sensor assembly to overcome the parasitic capacitance formed during fabrication.
Public/Granted literature
- US20090283846A1 BACKSIDE CONTROLLED MEMS CAPACITIVE SENSOR AND INTERFACE AND METHOD Public/Granted day:2009-11-19
Information query
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