Invention Grant
- Patent Title: Photosensitive semiconductor component
- Patent Title (中): 感光半导体元件
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Application No.: US12624632Application Date: 2009-11-24
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Publication No.: US08217483B2Publication Date: 2012-07-10
- Inventor: Kevin Fuechsel , Andreas Tuennermann , Ernst-Bernhard Kley
- Applicant: Kevin Fuechsel , Andreas Tuennermann , Ernst-Bernhard Kley
- Applicant Address: DE Munich
- Assignee: Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung E. V.
- Current Assignee: Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung E. V.
- Current Assignee Address: DE Munich
- Agency: Slater & Matsil, L.L.P.
- Priority: DE102007024478 20070525
- Main IPC: H01L31/102
- IPC: H01L31/102

Abstract:
A semiconductor component that includes a photosensitive doped semiconductor layer, in which electrical charge carriers are released during absorption of electromagnetic radiation is disclosed. The photosensitive semiconductor layer has a structured interface and at least one layer which generates an electric field for separating the released charge carriers disposed downstream of the structured interface. The electric field extends over the structured interface. The photosensitive semiconductor component is distinguished by a high efficiency of the charge carrier separation, in particular, for generating an electric current.
Public/Granted literature
- US20100133639A1 Photosensitive Semiconductor Component Public/Granted day:2010-06-03
Information query
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