Invention Grant
- Patent Title: Image sensor and method of fabricating the same
- Patent Title (中): 图像传感器及其制造方法
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Application No.: US12659958Application Date: 2010-03-26
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Publication No.: US08217484B2Publication Date: 2012-07-10
- Inventor: Byung Jun Park
- Applicant: Byung Jun Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2009-0026600 20090327
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L29/417 ; H01L29/74 ; H01L31/111 ; H01L27/10 ; H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
The image sensor includes a substrate; a wiring structure formed on a front side of the substrate and including a plurality of wiring layers and a plurality of insulating films; a first well formed within the substrate and having a first conductivity type; and a first metal wiring layer directly contacting a backside of the substrate and configured to apply a first well bias to the first well.
Public/Granted literature
- US20100244175A1 Image sensor and method of fabricating the same Public/Granted day:2010-09-30
Information query
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