Invention Grant
- Patent Title: Power semiconductor device
- Patent Title (中): 功率半导体器件
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Application No.: US12763689Application Date: 2010-04-20
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Publication No.: US08217487B2Publication Date: 2012-07-10
- Inventor: Yongcheol Choi , Chang-Ki Jeon , Minsuk Kim , Donghwan Kim
- Applicant: Yongcheol Choi , Chang-Ki Jeon , Minsuk Kim , Donghwan Kim
- Applicant Address: KR
- Assignee: Fairchild Korea Semiconductor Ltd.
- Current Assignee: Fairchild Korea Semiconductor Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR10-2009-0035525 20090423
- Main IPC: H02M3/07
- IPC: H02M3/07 ; H01L21/70

Abstract:
Disclosed is a power semiconductor device including a bootstrap circuit. The power semiconductor device includes a high voltage unit that provides a high voltage control signal so that a high voltage is output; a low voltage unit that provides a low voltage control signal so that a ground voltage is output, and is spaced apart from the high voltage unit; a charge enable unit that is electrically connected to the low voltage unit and charges a bootstrap capacitor for supplying power to the high voltage unit when the high voltage is output, when the ground voltage is output; and a high voltage cut-off unit that cuts off the high voltage when the high voltage is output so that the high voltage is not applied to the charge enable unit, and includes a first terminal electrically connected to the charge enable unit and a second terminal electrically connected to the high voltage unit.
Public/Granted literature
- US20100271079A1 POWER SEMICONDUCTOR DEVICE Public/Granted day:2010-10-28
Information query
IPC分类: