Invention Grant
- Patent Title: Electrostatic discharge protection device
- Patent Title (中): 静电放电保护装置
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Application No.: US12814699Application Date: 2010-06-14
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Publication No.: US08217494B2Publication Date: 2012-07-10
- Inventor: Te-Wei Chen
- Applicant: Te-Wei Chen
- Applicant Address: TW Jhubei, Hsinchu County
- Assignee: Silicon Motion, Inc.
- Current Assignee: Silicon Motion, Inc.
- Current Assignee Address: TW Jhubei, Hsinchu County
- Agency: Thomas|Kayden
- Priority: TW98135562A 20091021
- Main IPC: H01L29/73
- IPC: H01L29/73 ; H01L29/735

Abstract:
The invention provides an electrostatic discharge (ESD) protection device having an ESD path between a first circuit and a second circuit. The electrostatic discharge protection device includes a first doped region having a first conductive type. A first well has a second conductive type opposite to the first conductive type. A second doped region and a third doped region are in the first well, respectively having the first and second conductive types. The first doped region is coupled to a power supply terminal or a ground terminal of the first circuit, and the second and third doped regions are both coupled to a power supply terminal or a ground terminal of the second circuit, respectively.
Public/Granted literature
- US20110089535A1 Electrostatic Discharge Protection Device Public/Granted day:2011-04-21
Information query
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