Invention Grant
US08217498B2 Gallium nitride semiconductor device on SOI and process for making same
失效
SOI上的氮化镓半导体器件及其制造方法
- Patent Title: Gallium nitride semiconductor device on SOI and process for making same
- Patent Title (中): SOI上的氮化镓半导体器件及其制造方法
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Application No.: US11975289Application Date: 2007-10-18
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Publication No.: US08217498B2Publication Date: 2012-07-10
- Inventor: Rajaram Bhat , Kishor Purushottam Gadkaree , Jerome Napierala , Linda Ruth Pinckney , Chung-En Zah
- Applicant: Rajaram Bhat , Kishor Purushottam Gadkaree , Jerome Napierala , Linda Ruth Pinckney , Chung-En Zah
- Applicant Address: US NY Corning
- Assignee: Corning Incorporated
- Current Assignee: Corning Incorporated
- Current Assignee Address: US NY Corning
- Agent Bruce P. Watson
- Main IPC: H01L21/36
- IPC: H01L21/36
Abstract:
Methods and apparatus for producing a gallium nitride semiconductor on insulator structure include: bonding a single crystal silicon layer to a transparent substrate; and growing a single crystal gallium nitride layer on the single crystal silicon layer.
Public/Granted literature
- US20090101924A1 Gallium nitride semiconductor device on SOI and process for making same Public/Granted day:2009-04-23
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