Invention Grant
- Patent Title: Fuse for use in high-integrated semiconductor device
- Patent Title (中): 保险丝用于高集成度半导体器件
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Application No.: US12650305Application Date: 2009-12-30
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Publication No.: US08217710B2Publication Date: 2012-07-10
- Inventor: Byung Wook Bae
- Applicant: Byung Wook Bae
- Applicant Address: KR Icheon
- Assignee: Hynix Semiconductor Inc
- Current Assignee: Hynix Semiconductor Inc
- Current Assignee Address: KR Icheon
- Priority: KR10-2009-0018451 20090304
- Main IPC: H01H37/76
- IPC: H01H37/76

Abstract:
The invention relates to a semiconductor device comprising a fuse that is implemented as a bar type pattern that forms a straight line instead of a pattern that is difficult to secure a manufacturing margin. A fuse block including a plurality of fuses comprises a plurality of first connection parts, each including a blowing area, a plurality of second connection parts, wherein the plurality of the second connection parts and the plurality of the corresponding first connection parts respectively form part of the fuse, and a common connection unit configured to electrically connect the plurality of the first connection parts and the plurality of the second connection parts.
Public/Granted literature
- US20100225381A1 FUSE FOR USE IN HIGH-INTEGRATED SEMICONDUCTOR DEVICE Public/Granted day:2010-09-09
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