Invention Grant
US08217710B2 Fuse for use in high-integrated semiconductor device 有权
保险丝用于高集成度半导体器件

  • Patent Title: Fuse for use in high-integrated semiconductor device
  • Patent Title (中): 保险丝用于高集成度半导体器件
  • Application No.: US12650305
    Application Date: 2009-12-30
  • Publication No.: US08217710B2
    Publication Date: 2012-07-10
  • Inventor: Byung Wook Bae
  • Applicant: Byung Wook Bae
  • Applicant Address: KR Icheon
  • Assignee: Hynix Semiconductor Inc
  • Current Assignee: Hynix Semiconductor Inc
  • Current Assignee Address: KR Icheon
  • Priority: KR10-2009-0018451 20090304
  • Main IPC: H01H37/76
  • IPC: H01H37/76
Fuse for use in high-integrated semiconductor device
Abstract:
The invention relates to a semiconductor device comprising a fuse that is implemented as a bar type pattern that forms a straight line instead of a pattern that is difficult to secure a manufacturing margin. A fuse block including a plurality of fuses comprises a plurality of first connection parts, each including a blowing area, a plurality of second connection parts, wherein the plurality of the second connection parts and the plurality of the corresponding first connection parts respectively form part of the fuse, and a common connection unit configured to electrically connect the plurality of the first connection parts and the plurality of the second connection parts.
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