Invention Grant
- Patent Title: TMR sensor with a multilayered reference layer
- Patent Title (中): 具有多层参考层的TMR传感器
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Application No.: US12507618Application Date: 2009-07-22
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Publication No.: US08218271B2Publication Date: 2012-07-10
- Inventor: Alexander M. Zeltser
- Applicant: Alexander M. Zeltser
- Applicant Address: NL Amsterdam
- Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee: Hitachi Global Storage Technologies Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agency: Zilka-Kotab, PC
- Main IPC: G11B5/33
- IPC: G11B5/33

Abstract:
According to one embodiment, a method for forming at least a portion of a magnetic head includes forming a keeper layer, forming a reference layer, and forming an AFM coupling layer which is positioned between the keeper layer and the reference layer. In addition, forming the reference layer includes forming a layer of CoFe, depositing a layer of CoFeHf which is about 20 atomic % Hf, and depositing a layer of CoFeB such that the layers of CoFeHf and CoFeB are directly adjacent and a ratio of respective physical thicknesses of CoFeHf to CoFeB is less than about 0.66. Other embodiments are also included such as a magnetic head and additional methods for forming at least a portion of a magnetic head.
Public/Granted literature
- US20110020668A1 TMR SENSOR WITH A MULTILAYERED REFERENCE LAYER Public/Granted day:2011-01-27
Information query
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